4a, the high-side n-LDMOS is the same as the conventional one. 3b shows its simulation structure and doping (peak concentration) in TCAD MEDICI. 2 Proto structure for generating a control signal for low-side deviceĪ proto structure for providing a signal V F, for controlling low-side device M L is shown in Fig.
The simulation results of all structures are also presented.
The structure for generating power supplies for low-voltage circuits is presented in Section 4. The structure of generating two pulse voltages to a low-voltage circuit connected to the ground and then a pulse voltage signal for controlling the low-side high-voltage device is presented in Section 3. A proto structure of generating a pulse inside a single chip for generating control signal for low-side device is presented in Section 2. It is assumed a small control signal voltage with respect to the tub is formed inside of (or applied from outside to) a low-voltage tub circuit. This paper is aimed to overcome the disadvantages stated above. A bootstrap capacitance C b and a diode D 0 in this figure are off-chip components which increase the cost and take up printed circuit board (PCB) area in applications. 1, which not only increase the power consumption but also decrease the slew rate of the HVICs, see. It also needs a sophisticated technique to avoid the drain-substrate parasitic capacitances C Dsub1 and C Dsub2 of M 1 and M 2 shown in Fig. Such a high-voltage level-shifting circuit normally needs a separate isolation area which takes up much area of a chip and increase the complexity of the process. Therefore, it is obvious that a high-voltage level-shifting circuit, which includes M 1, M 2, R 1 and R 2, is indispensable. Structure of high-side and low-side n-LDMOS transistors of reference
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